Carbon incorporation for strain compensation during solid phase epitaxial recrystallization of SiGe on Si at 500–600 °C
نویسندگان
چکیده
Transmission electron microscopy has been combined with time-resolved reflectivity and ion channeling to study the effects of carbon doping on solid-phase epitaxial regrowth �SPER� of strained 2000 Å, Si0.88Ge0.12Si alloy layers grown by molecular-beam epitaxy �MBE�. Relative to the undoped layers, carbon incorporation in the MBE grown SiGe layers prior to regrowth at moderate temperatures �500–700 °C� has three main effects on SPER. These include a reduction in SPER rate, a delay in the onset of strain-relieving defect formation, and a sharpening of the amorphous/crystalline �a/c� interface, i.e., promotion of a two-dimensional �planar� growth front. These results suggest that C incorporated during SPER reduces the lattice-mismatch strain. © 1996 American Institute of Physics. �S0021-8979�96�10310-5�
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